利用碳等离子体热处理方法在钨金属和单晶硅片表面制备站立式石墨烯

doi:10.13251/j.issn.0254-6051.2020.07.028

金属热处理 ›› 2020, Vol. 45 ›› Issue (7): 139-142.DOI: 10.13251/j.issn.0254-6051.2020.07.028

利用碳等离子体热处理方法在钨金属和单晶硅片表面制备站立式石墨烯

成亦飞, 罗飞, 刘大博, 周海涛, 田野, 胡春文, 罗炳威

中国航发北京航空材料研究院, 北京 100095

收稿日期:2020-03-13 出版日期:2020-07-25 发布日期:2020-09-07
通讯作者: 罗炳威, 工程师, 博士, E-mail:luobingwei@126.com
作者简介:成亦飞(1973—), 男, 高级工程师, 工程硕士, 主要研究方向为热处理工艺, E-mail:cyf73@139.com。
基金资助:
国家自然科学基金(51602300, 51602299)

Preparation of graphene nanowalls on tungsten and single crystal silicon plate by thermal treatment of carbon plasma

Cheng Yifei, Luo Fei, Liu Dabo, Zhou Haitao, Tian Ye, Hu Chunwen, Luo Bingwei

AECC Beijing Institute of Aeronautical Materials, Beijing 100095, China

Received:2020-03-13 Online:2020-07-25 Published:2020-09-07

摘要/Abstract

摘要： 利用等离子体热处理方法,分别在W金属和单晶Si基底表面直接制备了站立式石墨烯。利用X射线衍射仪(XRD)、扫描电镜(SEM)、拉曼光谱(Raman)对获得的样品进行了结构和成分的表征,并用硬度计对样品表面硬度进行了测量。结果表明,在W金属和单晶Si基底表面分别形成了成分为W₂C-WC/石墨烯和SiC/石墨烯的复合层,且均匀的分布在相应的基底上。W₂C-WC/石墨烯复合层制备成功后,金属W的表面硬度为502.95 HV0.01,与纯金属W基底的硬度450.41 HV0.01相比,表面硬度增加52.54 HV0.01,提高了11.6%;SiC/石墨烯复合层制备成功后,SiC/石墨烯表层的硬度为836.76 HV0.025,与单晶Si基底的硬度812.74 HV0.025相比,表面硬度增加24.02 HV0.025,提高了2.95%。

关键词: W金属, WC, SiC, 等离子体, 石墨烯

Abstract: The graphene nanowalls were prepared directly on the surface of W metal and monocrystalline Si substrate by plasma thermal treatment. The microstructure and components of the samples were characterized by means of XRD, SEM and Raman spectroscopy, and the surface hardness were tested by using micro vickers hardness tester. The results show that the composite layers deposited on the surface of W and Si substrates are consisting of W₂C-WC/graphene and SiC/graphene, respectively, which distribute uniformly. Based on the layer of W₂C-WC/graphene, the surface hardness of metal W is 502.95 HV0.01, which increases by 52.54 HV0.01 and 11.6% compared with the pure metal W of 450.41 HV0.01. Based on the layer of SiC/graphene composite layer, the surface hardness of SiC/ graphene is 836.76 HV0.025, which increases by 24.02 HV0.025 and 2.95% compared with that of single crystal Si substrate of 812.74 HV0.025.

Key words: metal W, WC, SiC, plasma, graphene

中图分类号:

O472

成亦飞, 罗飞, 刘大博, 周海涛, 田野, 胡春文, 罗炳威. 利用碳等离子体热处理方法在钨金属和单晶硅片表面制备站立式石墨烯[J]. 金属热处理, 2020, 45(7): 139-142.

Cheng Yifei, Luo Fei, Liu Dabo, Zhou Haitao, Tian Ye, Hu Chunwen, Luo Bingwei. Preparation of graphene nanowalls on tungsten and single crystal silicon plate by thermal treatment of carbon plasma[J]. Heat Treatment of Metals, 2020, 45(7): 139-142.

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利用碳等离子体热处理方法在钨金属和单晶硅片表面制备站立式石墨烯

Preparation of graphene nanowalls on tungsten and single crystal silicon plate by thermal treatment of carbon plasma

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