金属热处理 ›› 2020, Vol. 45 ›› Issue (11): 94-98.DOI: 10.13251/j.issn.0254-6051.2020.11.018

• 工艺研究 • 上一篇    下一篇

扩散时间对W在TiAl合金中扩散行为的影响

黄庆奕, 易元   

  1. 航空工业成都飞机工业(集团)有限责任公司, 四川 成都 610091
  • 收稿日期:2020-08-03 出版日期:2020-11-25 发布日期:2020-12-29
  • 作者简介:黄庆奕(1986—),男,硕士,主要研究方向为飞机制造工艺,E-mail:cailiaojiaoyanshi@163.com

Effect of diffusion time on diffusion behavior of tungsten in TiAl alloy

Huang Qingyi, Yi Yuan   

  1. AVIC Chengdu Aircraft Industry (Group) Co., Ltd., Chengdu Sichuan 610091, China
  • Received:2020-08-03 Online:2020-11-25 Published:2020-12-29

摘要: 通过光学显微镜、扫描电镜和硬度测试等分析手段研究了在1250 ℃下扩散保温不同时间对W元素在TiAl合金中扩散行为的影响。结果表明:试样在1250 ℃下进行扩散不同时间后,渗层界面处连接良好,可观察到明显的冶金结合。扩散层厚度随扩散时间的延长而增加,扩散4 h后可得到约15 μm厚的渗层,扩散24 h后可得到约45 μm厚的渗层,此外较长的扩散时间(24 h)可显著改善界面处的裂纹和气孔等缺陷。W在TiAl合金中的扩散机制主要为置换和空位扩散,且W和Ti的原子半径和热膨胀系数等存在差异,使得晶格畸变的出现并进一步阻碍了W元素的扩散。显微硬度试验结果表明W在TiAl合金中进行扩散,可以增强TiAl合金的硬度,且硬度值随W含量的增大而增大。

关键词: 钛铝合金, 扩散机理, 扩散连接,

Abstract: Effect of holding time on diffusion behavior of tungsten in TiAl alloy under 1250 ℃ was studied by means of OM, SEM, and hardness test. The results show that, the interface between specimens have good combination after diffusion at 1250 ℃ for different time, which shows obvious metallurgical bonding. And the thickness of diffusion layers increases with increasing time, thus the thickness of diffusion layer after diffusion for 4 h is about 15 μm, and that for 24 h is about 45 μm. In addition, the defects such as cracks and pore at the interface can be inhibited by prolonging diffusion time (24 h). The replacement and vacancy diffusion are the main diffusion mechanisms of tungsten in the TiAl alloy, and the W and Ti atoms have some difference on atomic radius and coefficient of thermal expansion, which makes the lattice distort and furtherly prohibits the diffusion of W element. The results of hardness test show that, after diffusion of tungsten in the TiAl alloy, the hardness of TiAl alloy is reinforced, and the value increases with the increase of W contont.

Key words: titanium aluminum alloy, diffusion mechanism, diffusion bonding, tungsten

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