中低温退火对MoS2纳米薄膜形貌、结构及电性能的影响

doi:10.13251/j.issn.0254-6051.2024.07.029

金属热处理 ›› 2024, Vol. 49 ›› Issue (7): 186-194.DOI: 10.13251/j.issn.0254-6051.2024.07.029

中低温退火对MoS₂纳米薄膜形貌、结构及电性能的影响

刘春泉¹, 熊芬^1,2, 马佳仪², 周锦添¹, 梁泽巽², 黄建平¹

1.湖南工学院材料科学与工程学院, 湖南衡阳 421002;
2.湖南工学院计算机科学与工程学院, 湖南衡阳 421002

收稿日期:2024-01-15 修回日期:2024-04-17 出版日期:2024-07-25 发布日期:2024-08-29
通讯作者: 熊芬,讲师,硕士,E-mail:1814966464@qq.com
作者简介:刘春泉(1994—),男,副教授,博士,主要研究方向为金属基新型材料的制备,E-mail:liuchunquan@hnit.edu.cn。
基金资助:
湖南省科技人才托举工程项目“小荷”科技人才专项(2023TJ-X10);湖南省自然科学基金(2023JJ50108);湖南省创新型省份建设专项科普专题项目(2023ZK4316);湖南省教育厅科学研究项目(20A137, 22C0629);湖南省应用特色学科材料科学与工程学科(湘教通[2022]351);衡阳市“小荷”科技人才项目(衡市科协字[2022]68);湖南工学院自科培育项目(2022HY007);湖南省大学生创新创业训练计划项目(S202411528133,S202311528111,S202311528096X)

Effect of medium-low temperature annealing on morphology, structure and electrical properties of MoS₂ nano films

Liu Chunquan¹, Xiong Fen^1,2, Ma Jiayi², Zhou Jintian¹, Liang Zexun², Huang Jianping¹

1. School of Materials Science and Engineering, Hunan Institute of Technology, Hengyang Hunan 421002, China;
2. School of Computer Science and Engineering, Hunan Institute of Technology, Hengyang Hunan 421002, China

Received:2024-01-15 Revised:2024-04-17 Online:2024-07-25 Published:2024-08-29

摘要/Abstract

摘要： 采用射频(RF)磁控溅射室温沉积制备了不同厚度的MoS₂薄膜,然后在95%Ar+5%H₂混合气氛中进行不同退火处理,采用原子力显微镜(AFM)、拉曼光谱、四探针和霍尔测试仪系统地研究了不同退火条件对MoS₂薄膜结构、表面形貌和电学性能的影响。结果表明:在硅基片生长的MoS₂薄膜均匀连续,退火能有效去除MoS₂中的杂质氧进而改善其结晶性、稳定性和结构完整性。溅射沉积40 min(厚度约为300 nm)时MoS₂薄膜的综合性能较好,经500 ℃退火60 min时,MoS₂薄膜的结晶性和电学性能均较好。

关键词: MoS₂薄膜, 中低温退火, 结晶性

Abstract: MoS₂ nano films with different thicknesses were prepared by radio frequency (RF) magnetron sputtering via deposition at room temperature, and then annealed by different processes in 95%Ar+5%H₂ mixed atmosphere. The structure, surface morphology and electrical properties of the MoS₂ films were studied by means of atomic force microscope(AFM), Raman spectrum, four-probe and Hall tester. The results show that the MoS₂ films grown on the silicon substrate are uniform and continuous. The annealing process can effectively remove the impurity oxygen in MoS₂ films and improve its crystallinity, stability and structural integrity. The comprehensive properties of the MoS₂ films are better when the deposition time is 40 min (the thickness is about 300 nm), while the crystallinity and electrical properties of the films after annealing at 500 ℃ for 60 min are all better.

Key words: MoS₂ film, medium-low temperature annealing, crystallinity

中图分类号:

TN304

刘春泉, 熊芬, 马佳仪, 周锦添, 梁泽巽, 黄建平. 中低温退火对MoS₂纳米薄膜形貌、结构及电性能的影响[J]. 金属热处理, 2024, 49(7): 186-194.

Liu Chunquan, Xiong Fen, Ma Jiayi, Zhou Jintian, Liang Zexun, Huang Jianping. Effect of medium-low temperature annealing on morphology, structure and electrical properties of MoS₂ nano films[J]. Heat Treatment of Metals, 2024, 49(7): 186-194.

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中低温退火对MoS₂纳米薄膜形貌、结构及电性能的影响

Effect of medium-low temperature annealing on morphology, structure and electrical properties of MoS₂ nano films

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