Heat Treatment of Metals ›› 2023, Vol. 48 ›› Issue (2): 232-241.DOI: 10.13251/j.issn.0254-6051.2023.02.037

• NUMERICAL SIMULATION • Previous Articles     Next Articles

Numerical simulation of effect of hot-pressing process on growth of interfacial reaction layer in SiCf/Ti composites

Tang Hongwu1,2, Zhang Xiaomin1,2, Zhao Zhipeng1,2, Zhang Hengjia1,2   

  1. 1. College of Aerospace Engineering, Chongqing University, Chongqing 400044, China;
    2. Chongqing Key Laboratory of Mechanics of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400044, China
  • Received:2022-09-23 Revised:2022-12-25 Online:2023-02-25 Published:2023-03-22

Abstract: A phase field model based on strongly coupled thermo-mechano-diffusion-reactional theory was proposed to study the effect of hot-pressing sintering fabrication process on growth law of intermetallic compounds in the continuous silicon carbide fiber reinforced titanium matrix composites. The simulation results show that the thickness of each interface reaction layer is consistent with the experiment at two different temperatures. Further research shows that the applied load can promote the growth of interface reaction layer, but the growth of Ti5Si3 layer is significantly inhibited, which has the lowest tensile strength. With the increase of applied load, the circumferential stress changes from tension to compression. The thickness of Ti3SiC2 layer increases with temperature rising, which has the maximum fracture toughness, as well as the thickness of the total interface reaction layer and Ti5Si3 layer are also increased. Therefore, it is an important way to improve the mechanical properties of SiCf/Ti composites by properly increasing the pressure and selecting the appropriate temperature in the preparation process to obtain the interface reaction layer with the appropriate thickness, meanwhile, making the Ti5Si3 layer thinner and the Ti3SiC2 layer thicker as far as possible.

Key words: SiC fiber reinforced titanium matrix composites, thermo-mechano-diffusion-reactional coupling, phase field method, interface layer growth, hot-pressing sintering

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