Effect of medium-low temperature annealing on morphology, structure and electrical properties of MoS2 nano films

doi:10.13251/j.issn.0254-6051.2024.07.029

Abstract

Abstract: MoS₂ nano films with different thicknesses were prepared by radio frequency (RF) magnetron sputtering via deposition at room temperature, and then annealed by different processes in 95%Ar+5%H₂ mixed atmosphere. The structure, surface morphology and electrical properties of the MoS₂ films were studied by means of atomic force microscope(AFM), Raman spectrum, four-probe and Hall tester. The results show that the MoS₂ films grown on the silicon substrate are uniform and continuous. The annealing process can effectively remove the impurity oxygen in MoS₂ films and improve its crystallinity, stability and structural integrity. The comprehensive properties of the MoS₂ films are better when the deposition time is 40 min (the thickness is about 300 nm), while the crystallinity and electrical properties of the films after annealing at 500 ℃ for 60 min are all better.

Key words: MoS₂ film, medium-low temperature annealing, crystallinity

CLC Number:

TN304

Liu Chunquan, Xiong Fen, Ma Jiayi, Zhou Jintian, Liang Zexun, Huang Jianping. Effect of medium-low temperature annealing on morphology, structure and electrical properties of MoS₂ nano films[J]. Heat Treatment of Metals, 2024, 49(7): 186-194.

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Effect of medium-low temperature annealing on morphology, structure and electrical properties of MoS₂ nano films

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